ALEXANDRIA, Va., Aug. 5 -- United States Patent no. 12,701,713, issued on Aug. 4, was assigned to SAMSUNG ELECTRONICS Co. Ltd. (Gyeonggi-do, South Korea).
"Ferroelectric semiconductor device" was invented by Hyunjae Lee (Suwon-si, South Korea), Jinseong Heo (Suwon-si, South Korea), Seunggeol Nam (Suwon-si, South Korea), Yunseong Lee (Suwon-si, South Korea) and Dukhyun Choe (Suwon-si, South Korea).
According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device including a substrate, an interfacial layer on the substrate, a ferroelectric layer on the interfacial layer, a gate on the ferroelectric layer, and the nitride protective layer between the interfacial layer and the gate and being adjacent to the f...