ALEXANDRIA, Va., Aug. 26 -- United States Patent no. 12,400,911, issued on Aug. 26, was assigned to SAMSUNG ELECTRONICS Co. Ltd. (South Korea).
"Semiconductor device and method for fabricating thereof" was invented by Jong Jin Lee (Seoul, South Korea), Seung Yong Yoo (Incheon, South Korea) and Eun-Ji Jung (Hwaseong-si, South Korea).
According to the abstract* released by the U.S. Patent & Trademark Office: "The present disclosure provides a semiconductor device capable of improving element performance and reliability. The semiconductor device comprises a lower wiring structure, an upper interlayer insulating layer disposed on the lower wiring structure and including an upper wiring trench, the upper wiring trench exposing a portion of the...