US Patent Issued to SAMSUNG ELECTRONICS on Aug. 26 for "Memory device and operating method of a memory device" (South Korean Inventors)

ALEXANDRIA, Va., Aug. 26 -- United States Patent no. 12,401,353, issued on Aug. 26, was assigned to SAMSUNG ELECTRONICS Co. LTD. (Suwon-si, South Korea).

"Memory device and operating method of a memory device" was invented by Mingyu Lee (Suwon-si, South Korea), Youngchul Cho (Suwon-si, South Korea), Seungjin Park (Suwon-si, South Korea), Youngdon Choi (Suwon-si, South Korea) and Junghwan Choi (Suwon-si, South Korea).

According to the abstract* released by the U.S. Patent & Trademark Office: "A clock signal delay path unit includes a first delay cell including a first root signal line for delaying and transmitting a clock signal, a first repeater to transmit the clock signal transmitted through the first root signal line without signal att...