ALEXANDRIA, Va., Aug. 25 -- United States Patent no. 12,720,732, issued on Aug. 25, was assigned to SAMSUNG ELECTRONICS Co. Ltd. (Suwon-si, South Korea).
"Semiconductor memory devices having active and isolation patterns" was invented by Junhyeok Ahn (Suwon-si, South Korea).
According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor memory device may include an active pattern on a substrate and at least partially surrounded by a device isolation pattern, a gate electrode that crosses the active pattern in a first direction parallel to a bottom surface of the substrate, the gate electrode including lower and upper portions, and a side-capping pattern on a top surface of the lower portion of the gate electro...