ALEXANDRIA, Va., Aug. 25 -- United States Patent no. 12,720,800, issued on Aug. 25, was assigned to SAMSUNG ELECTRONICS Co. LTD. (Suwon-si, South Korea).
"Semiconductor device having a two-dimensional channel and method for fabricating the same" was invented by Sung Il Park (Suwon-si, South Korea) and Jae Hyun Park (Hwaseong-si, South Korea).
According to the abstract* released by the U.S. Patent & Trademark Office: "There is provided a semiconductor device having reduced contact resistance and enhanced performance. The semiconductor device includes a substrate, a first active pattern spaced apart from the substrate and extending in a first direction, and including a first two-dimensional semiconductor material, a first gate electrode ext...