US Patent Issued to SAMSUNG ELECTRONICS on Aug. 25 for "Memory device" (South Korean Inventors)

ALEXANDRIA, Va., Aug. 25 -- United States Patent no. 12,720,758, issued on Aug. 25, was assigned to SAMSUNG ELECTRONICS Co. Ltd. (Suwon-si, South Korea).

"Memory device" was invented by Hyuncheol Kim (Suwon-si, South Korea), Yongseok Kim (Suwon-si, South Korea), Kiheun Lee (Suwon-si, South Korea) and Daewon Ha (Suwon-si, South Korea).

According to the abstract* released by the U.S. Patent & Trademark Office: "A memory device includes a channel region, a conductive electrode on the channel region, and a data storage structure between the channel region and the conductive electrode. The data storage structure includes a stack structure including two-dimensional material layers and ferroelectric layers stacked alternately and repeatedly in a...