US Patent Issued to SAMSUNG ELECTRONICS on Aug. 25 for "Magnetic memory device and method of manufacturing the same" (South Korean Inventors)

ALEXANDRIA, Va., Aug. 25 -- United States Patent no. 12,721,043, issued on Aug. 25, was assigned to SAMSUNG ELECTRONICS Co. Ltd. (Gyeonggi-do, South Korea).

"Magnetic memory device and method of manufacturing the same" was invented by Jae Hoon Kim (Suwon-si, South Korea), Hyeonwoo Seo (Suwon-si, South Korea) and Youngjun Cho (Suwon-si, South Korea).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method of manufacturing a magnetic memory device may include forming a bottom electrode layer on a substrate; forming a block structure on the bottom electrode layer; performing a first deposition process on the bottom electrode layer to form a pinned magnetic layer, a tunnel barrier layer, and a free magnetic layer ...