ALEXANDRIA, Va., Aug. 25 -- United States Patent no. 12,720,730, issued on Aug. 25, was assigned to SAMSUNG ELECTRONICS Co. Ltd. (Gyeonggi-do, South Korea).
"Integrated circuit device" was invented by Yangdoo Kim (Suwon-si, South Korea), Dongwook Kim (Suwon-si, South Korea), Sangwuk Park (Suwon-si, South Korea), Minkyu Suh (Suwon-si, South Korea), Geonyeop Lee (Suwon-si, South Korea), Dokeun Lee (Suwon-si, South Korea) and Jungpyo Hong (Suwon-si, South Korea).
According to the abstract* released by the U.S. Patent & Trademark Office: "An integrated circuit (IC) device may include a conductive area on a substrate; a first electrode connected to the conductive area on the substrate, a width of the first electrode in a lateral direction grad...