ALEXANDRIA, Va., Aug. 25 -- United States Patent no. 12,720,722, issued on Aug. 25, was assigned to SAMSUNG ELECTRONICS Co. Ltd. (Suwon-si, South Korea).
"Fabricating semiconductor device" was invented by Sookyung Kim (Suwon-si, South Korea), Chan Hwang (Suwon-si, South Korea) and Jeonghee Choi (Suwon-si, South Korea).
According to the abstract* released by the U.S. Patent & Trademark Office: "A method of fabricating a semiconductor device includes forming a photoresist layer on a lower structure to have a first thickness, exposing a portion of the photoresist layer to form an exposed portion and a non-exposed portion of the photoresist layer, removing a part of the photoresist layer to form a photoresist layer having a second thickness t...