ALEXANDRIA, Va., Aug. 18 -- United States Patent no. 12,713,857, issued on Aug. 18, was assigned to SAMSUNG ELECTRONICS Co. Ltd. (Suwon-si, South Korea).

"Method for manufacturing semiconductor device" was invented by Sanggyo Chung (Suwon-si, South Korea), Seunghee Han (Suwon-si, South Korea), Seulgi Lee (Suwon-si, South Korea) and Chanmi Lee (Suwon-si, South Korea).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method for manufacturing a semiconductor device includes stacking an etch target layer and an etching mask layer on a substrate having first through third regions, forming first photoresist patterns on the etching mask layer in the first and second regions and a second photoresist pattern to complet...