ALEXANDRIA, Va., Aug. 12 -- United States Patent no. 12,707,711, issued on Aug. 11, was assigned to SAMSUNG ELECTRONICS Co. LTD. (Suwon-si, South Korea).
"Semiconductor device with CMOS inverter" was invented by Beomyong Hwang (Seoul, South Korea), Jihye Kwon (Yongin-si, South Korea) and Jiyoung Kim (Yongin-si, South Korea).
According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device includes a buried insulation layer pattern on a lower substrate. A first semiconductor pattern and a second semiconductor pattern pattern are disposed on on the buried insulation layer pattern. A lower conductive pattern is formed in a lower portion of a first recess between the first and second semiconductor patterns, a...