ALEXANDRIA, Va., Aug. 12 -- United States Patent no. 12,706,159, issued on Aug. 11, was assigned to SAMSUNG ELECTRONICS Co. Ltd. (Suwon-si, South Korea).
"Non-volatile memory device and operation method thereof" was invented by Taewan Kim (Suwon-si, South Korea) and Hyunkook Park (Suwon-si, South Korea).
According to the abstract* released by the U.S. Patent & Trademark Office: "The present disclosure relates to methods of operating non-volatile memory devices. An example read operation method of a non-volatile memory device includes applying a first read voltage, generated from a voltage generator, to a selected wordline, performing a first sensing node develop operation associated with the first read voltage, and performing a first sens...