US Patent Issued to SAMSUNG ELECTRONICS on Aug. 11 for "Memory device including damage detection circuit and test system including the memory device" (South Korean Inventors)

ALEXANDRIA, Va., Aug. 12 -- United States Patent no. 12,706,171, issued on Aug. 11, was assigned to SAMSUNG ELECTRONICS Co. LTD. (Suwon-si, South Korea).

"Memory device including damage detection circuit and test system including the memory device" was invented by Eunji Kim (Suwon-si, South Korea), Wandong Kim (Suwon-si, South Korea), Byongmo Moon (Suwon-si, South Korea) and Kwangjin Lee (Suwon-si, South Korea).

According to the abstract* released by the U.S. Patent & Trademark Office: "A memory device includes a memory cell array region including a plurality of memory cells, a first test pattern form disposed below a bonding pad and configured to output a first test output signal, a second test pattern form disposed below a non-bonding p...