ALEXANDRIA, Va., Aug. 12 -- United States Patent no. 12,704,984, issued on Aug. 11, was assigned to SAMSUNG ELECTRONICS Co. LTD. (Suwon-si, South Korea).
"Memory device, method of calibrating signal level thereof, and memory system having the same" was invented by Youngdo Um (Suwon-si, South Korea), Jaewoo Park (Suwon-si, South Korea), Younghoon Son (Suwon-si, South Korea), Youngdon Choi (Suwon-si, South Korea) and Junghwan Choi (Suwon-si, South Korea).
According to the abstract* released by the U.S. Patent & Trademark Office: "A method of calibrating a signal level of a memory device includes performing pull-up code and pull-down code calibrations, using a ZQ calibration for non-return-to-zero (NRZ) signaling, performing a most significa...