ALEXANDRIA, Va., April 7 -- United States Patent no. 12,599,040, issued on April 7, was assigned to SAMSUNG ELECTRONICS Co. LTD. (Suwon-si, South Korea).
"Three-dimensional integrated circuit structure and a method of fabricating the same" was invented by Jegwan Hwang (Suwon-si, South Korea), Jihyung Kim (Seoul, South Korea), Jeong Hoon Ahn (Seongnam-si, South Korea), Jaehee Oh (Seongnam-si, South Korea), Shaofeng Ding (Suwon-si, South Korea), Won Ji Park (Suwon-si, South Korea), WooSeong Jang (Suwon-si, South Korea) and Seokjun Hong (Suwon-si, South Korea).
According to the abstract* released by the U.S. Patent & Trademark Office: "A three-dimensional integrated circuit structure including: a first die including a first power delivery ne...