US Patent Issued to SAMSUNG ELECTRONICS on April 7 for "Semiconductor devices with insulated source/drain jumper structures" (South Korean Inventors)

ALEXANDRIA, Va., April 7 -- United States Patent no. 12,598,982, issued on April 7, was assigned to SAMSUNG ELECTRONICS Co. LTD. (Suwon-si, South Korea).

"Semiconductor devices with insulated source/drain jumper structures" was invented by Sidharth Rastogi (Hwaseong-si, South Korea), Subhash Kuchanuri (Hwaseong-si, South Korea), Jae Seok Yang (Hwaseong-si, South Korea) and Kwan Young Chun (Suwon-si, South Korea).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device includes an insulator on a substrate and having opposite first and second sides that each extend along a first direction, a first fin pattern extending from a third side of the insulator along the first direction, a second fin patte...