ALEXANDRIA, Va., April 7 -- United States Patent no. 12,598,984, issued on April 7, was assigned to SAMSUNG ELECTRONICS Co. Ltd. (Suwon-si, South Korea).
"Semiconductor device including conductive structure and method for manufacturing the same" was invented by Jungha Hwang (Yongin-si, South Korea), Dongchan Lim (Hwaseong-si, South Korea) and Seulgi Bae (Yeosu-si, South Korea).
According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device including an insulating structure, and a conductive structure in the insulating structure may be provided. The conductive structure includes a barrier layer, an anti-migration layer on the barrier layer, a liner on the anti-migration layer, a conductive layer on the l...