ALEXANDRIA, Va., April 7 -- United States Patent no. 12,598,828, issued on April 7, was assigned to SAMSUNG ELECTRONICS Co. LTD. (Suwon-si, South Korea).
"Semiconductor device" was invented by Hyoun-Jee Ha (Hwaseong-si, South Korea), Changhwa Kim (Hwaseong-si, South Korea) and Jeongsoon Kang (Busan, South Korea).
According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device includes a substrate, a gate pattern, and a conductive line pattern. The substrate has a first surface and a second surface and includes an isolation pattern that defines plural pixel regions, and a photoelectric conversion region in each pixel region and a transistor for each of the pixel regions. The gate pattern of the transistor...