ALEXANDRIA, Va., April 7 -- United States Patent no. 12,598,975, issued on April 7, was assigned to SAMSUNG ELECTRONICS Co. LTD. (Suwon-si, South Korea).
"Integrated circuit device" was invented by Jina Lee (Suwon-si, South Korea), Jongdoo Kim (Suwon-si, South Korea) and Bongkeun Kim (Suwon-si, South Korea).
According to the abstract* released by the U.S. Patent & Trademark Office: "An integrated circuit device includes a first cell and a second cell apart from each other in a first lateral direction on a substrate, the first cell and the second cell each including a plurality of gate lines, an inter-cell isolation region between the first cell and the second cell, the inter-cell isolation region extending in a second lateral direction, a...