ALEXANDRIA, Va., April 21 -- United States Patent no. 12,609,263, issued on April 21, was assigned to SAMSUNG ELECTRONICS Co. Ltd. (Gyeonggi-do, South Korea).
"Repeller for ion generating apparatus, ion generating apparatus and semiconductor wafer ion implantation apparatus" was invented by Kyoungchul Yoo (Suwon-si, South Korea).
According to the abstract* released by the U.S. Patent & Trademark Office: "A repeller may be mounted inside an arc chamber of an ion implantation apparatus for doping impurities into a surface film of a semiconductor wafer. The repeller may include a body including an outer circumferential surface and a surface area enlargement portion on the body. The surface area enlargement portion may include striped grooves...