ALEXANDRIA, Va., April 15 -- United States Patent no. 12,604,722, issued on April 14, was assigned to SAMSUNG ELECTRONICS Co. Ltd. (Suwon-si, South Korea).
"Semiconductor devices" was invented by Sangoh Park (Hwaseong-si, South Korea), Hyunseo Shin (Hwaseong-si, South Korea), Seokhan Park (Seongnam-si, South Korea) and Seunghune Yang (Seoul, South Korea).
According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device may include a gate structure, first and second source/drain layers, first and second contact plugs, first and second conductive structures, and a third contact plug. The gate structure may be on a substrate. The first and second source/drain layers may be at upper portions, respectively, of...