ALEXANDRIA, Va., April 15 -- United States Patent no. 12,604,484, issued on April 14, was assigned to SAMSUNG ELECTRONICS Co. Ltd. (Suwon-si, South Korea).
"Semiconductor device including data storage structure and method of manufacturing data storage structure" was invented by Kyooho Jung (Seoul, South Korea).
According to the abstract* released by the U.S. Patent & Trademark Office: "A data storage structure may include a lower electrode, a dielectric layer on the lower electrode, and an upper electrode on the dielectric layer. The dielectric layer may include a metal compound having a crystalline phase and including a first metal. The dielectric layer also may include a phase control material located in an interfacial region of the die...