ALEXANDRIA, Va., April 15 -- United States Patent no. 12,604,492, issued on April 14, was assigned to SAMSUNG ELECTRONICS Co. LTD. (Suwon-si, South Korea).

"Semiconductor device including an active pattern" was invented by Hyohoon Byeon (Suwon-si, South Korea), Seokhoon Kim (Suwon-si, South Korea), Yuyeong Jo (Suwon-si, South Korea), Pankwi Park (Suwon-si, South Korea) and Sungkeun Lim (Suwon-si, South Korea).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device includes: a substrate including an active pattern; a first channel structure overlapping the active pattern; a gate electrode including an electrode portion between the active pattern and the first channel structure; a semiconductor la...