US Patent Issued to SAMSUNG ELECTRONICS on April 14 for "Semiconductor device having a through-via structure electrically connected to a contact structure" (South Korean Inventors)

ALEXANDRIA, Va., April 15 -- United States Patent no. 12,604,719, issued on April 14, was assigned to SAMSUNG ELECTRONICS Co. LTD. (Suwon-si, South Korea).

"Semiconductor device having a through-via structure electrically connected to a contact structure" was invented by Sohye Cho (Hwaseong-si, South Korea), Kwangjin Moon (Hwaseong-si, South Korea) and Hojin Lee (Hwaseong-si, South Korea).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device includes a first semiconductor substrate having a protruding active pattern, a gate structure, a source/drain region in the active pattern on a side of the gate structure, an interlayer insulating layer on the source/drain region, a contact structure conne...