ALEXANDRIA, Va., April 15 -- United States Patent no. 12,601,055, issued on April 14, was assigned to SAMSUNG ELECTRONICS Co. Ltd. (Gyeonggi-do, South Korea).
"Method of depositing atomic layer" was invented by Hyunjun Ahn (Suwon-si, South Korea), Byounghoon Ji (Suwon-si, South Korea) and Kyoungwoo Hong (Suwon-si, South Korea).
According to the abstract* released by the U.S. Patent & Trademark Office: "A method of depositing an atomic layer is provided. The method includes a plurality of deposition cycles. Each of the plurality of deposition cycles includes rotating a valve plate included in an exhaust port by a first angle while supplying a precursor to a chamber into which a substrate is loaded, rotating the valve plate by a second angl...