US Patent Issued to SAMSUNG ELECTRONICS, UIF (UNIVERSITY INDUSTRY FOUNDATION), YONSEI UNIVERSITY on Feb. 24 for "Memory device and a driving method of a sensing device included in the memory device" (South Korean Inventors)

ALEXANDRIA, Va., Feb. 24 -- United States Patent no. 12,562,217, issued on Feb. 24, was assigned to SAMSUNG ELECTRONICS Co. LTD. (Suwon-si, South Korea) and UIF (UNIVERSITY INDUSTRY FOUNDATION), YONSEI UNIVERSITY (Seoul, South Korea).

"Memory device and a driving method of a sensing device included in the memory device" was invented by Hyun-Chul Yoon (Suwon-si, South Korea) and Youngcheol Chae (Seoul, South Korea).

According to the abstract* released by the U.S. Patent & Trademark Office: "A memory device including: a memory cell array including a first memory cell connected to a bit line, and a second memory cell connected to a complementary bit line; a bit line sense amplifier including a sensing bit line and a sensing complementary bit...