US Patent Issued to SAMSUNG ELECTRONICS, SOGANG UNIVERSITY RESEARCH FOUNDATION on June 2 for "Power semiconductor device including a shielding region" (South Korean Inventors)

ALEXANDRIA, Va., June 2 -- United States Patent no. 12,648,188, issued on June 2, was assigned to SAMSUNG ELECTRONICS Co. LTD. (Suwon-si, South Korea) and SOGANG UNIVERSITY RESEARCH FOUNDATION (Seoul, South Korea).

"Power semiconductor device including a shielding region" was invented by Kwangsoo Kim (Seoul, South Korea) and Jinhee Cheon (Seoul, South Korea).

According to the abstract* released by the U.S. Patent & Trademark Office: "A power semiconductor device includes a base semiconductor layer including impurities of a first conductivity type; a body portion provided on the base semiconductor layer and defined by a source trench, the body portion including a gate trench extending inwardly from an upper surface of the body portion; a g...