US Patent Issued to SAMSUNG ELECTRONICS, RESEARCH & BUSINESS FOUNDATION SUNGKYUNKWAN UNIVERSITY on Nov. 3 for "Method of forming amorphous titanium dioxide thin film using low temperature atomic layer deposition method and method of fabricating optical structure" (South Korean Inventors)

ALEXANDRIA, Va., Nov. 3 -- United States Patent no. 12,782,607, issued on Nov. 3, was assigned to SAMSUNG ELECTRONICS Co. LTD. (Suwon-si, South Korea) and RESEARCH & BUSINESS FOUNDATION SUNGKYUNKWAN UNIVERSITY (Suwon-si, South Korea).

"Method of forming amorphous titanium dioxide thin film using low temperature atomic layer deposition method and method of fabricating optical structure" was invented by Hongkyu Park (Yongin-si, South Korea), Hyunjung Shin (Seoul, South Korea), Hyoungmin Park (Osan-si, South Korea), Seokho Yun (Seoul, South Korea) and Minwoo Lim (Suwon-si, South Korea).

According to the abstract* released by the U.S. Patent & Trademark Office: "Provided is a method of forming an amorphous titanium dioxide (TiO2) thin film on...