US Patent Issued to SAMSUNG ELECTRONICS, POSTECH Research and Business Development Foundation on Sept. 22 for "Memory device including in-memory operation circuit and operating method thereof" (South Korean Inventors)

ALEXANDRIA, Va., Sept. 24 -- United States Patent no. 12,744,071, issued on Sept. 22, was assigned to SAMSUNG ELECTRONICS Co. LTD. and POSTECH Research and Business Development Foundation.

"Memory device including in-memory operation circuit and operating method thereof" was invented by Yoonyoung Chung (Pohang-si, South Korea) and Suwon Seong (Pohang-si, South Korea).

According to the abstract* released by the U.S. Patent & Trademark Office: "A memory device includes an in-memory operation circuit connected to a write word line, a plurality of write bit lines, a read word line, and a read bit line, and including bit cells. Each of the plurality of bit cells includes a first transistor having one end connected to a corresponding write bit ...