US Patent Issued to SAMSUNG ELECTRONICS, Korea Advanced Institute of Science and Technology on Feb. 17 for "Three-dimensional semiconductor memory device with increased electron mobility and electronic system including the same" (South Korean Inventors)

ALEXANDRIA, Va., Feb. 17 -- United States Patent no. 12,557,280, issued on Feb. 17, was assigned to SAMSUNG ELECTRONICS Co. Ltd. (Gyeonggi-do, South Korea) and Korea Advanced Institute of Science and Technology (Daejeon, South Korea).

"Three-dimensional semiconductor memory device with increased electron mobility and electronic system including the same" was invented by Tae In Lee (Daejeon, South Korea), Byung Jin Cho (Daejeon, South Korea), Jung Hoon Lee (Hwaseong-si, South Korea) and Jaeduk Lee (Seongnam-si, South Korea).

According to the abstract* released by the U.S. Patent & Trademark Office: "A three-dimensional semiconductor memory device may include a substrate, a stack structure including interlayer dielectric layers and gate ele...