US Patent Issued to SAMSUNG ELECTRONICS, INDUSTRY FOUNDATION OF CHONNAM NATIONAL UNIVERSITY on Dec. 2 for "Electrode structure including metal and heat dissipation layer and semiconductor including the electrode structure" (South Korean Inventors)

ALEXANDRIA, Va., Dec. 2 -- United States Patent no. 12,489,028, issued on Dec. 2, was assigned to SAMSUNG ELECTRONICS Co. LTD. (Suwon-si, South Korea) and INDUSTRY FOUNDATION OF CHONNAM NATIONAL UNIVERSITY (Gwangju, South Korea).

"Electrode structure including metal and heat dissipation layer and semiconductor including the electrode structure" was invented by Sang Hyun Lee (Gwangju, South Korea), Hokyun Rho (Jeongeup-si, South Korea) and Min Hee Jeong (Gwangju, South Korea).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device includes a substrate. A first heat dissipation layer is disposed on the substrate and extends in a first direction. A metal layer is disposed on the first heat dissipat...