US Patent Issued to SAMSUNG ELECTRONICS, Industry-Academic Cooperation Foundation, Yonsei University on March 3 for "Semiconductor device including through-silicon via (TSV) test device and operating method thereof" (South Korean, North Korean Inventors)

ALEXANDRIA, Va., March 3 -- United States Patent no. 12,568,860, issued on March 3, was assigned to SAMSUNG ELECTRONICS Co. Ltd. (Suwon-Si, South Korea) and Industry-Academic Cooperation Foundation, Yonsei University (Seoul, South Korea).

"Semiconductor device including through-silicon via (TSV) test device and operating method thereof" was invented by Youngkwang Lee (Seoul, North Korea) and Sungho Kang (Seoul, South Korea).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor system, a semiconductor device, a through-silicon via (TSV) test method, and a method of manufacturing a semiconductor device are provided. The semiconductor system includes a semiconductor device including a buffer die and fir...