US Patent Issued to SAMSUNG ELECTRONICS, DONGWOO FINE-CHEM on May 19 for "Etchant composition for etching silicon and silicon germanium, and preparation method of pattern using the same" (South Korean Inventors)

ALEXANDRIA, Va., May 19 -- United States Patent no. 12,630,764, issued on May 19, was assigned to SAMSUNG ELECTRONICS Co. Ltd. (Gyeonggi-do, South Korea) and DONGWOO FINE-CHEM Co. LTD. (Jeollabuk-do, South Korea).

"Etchant composition for etching silicon and silicon germanium, and preparation method of pattern using the same" was invented by Heesuk Woo (Suwon-si, South Korea), Kyusang Ahn (Iksan-si, South Korea), Jung-Min Oh (Suwon-si, South Korea), Jiwon Kim (Iksan-si, South Korea), Jinkyu Roh (Iksan-si, South Korea), Hyojoong Yoon (Iksan-si, South Korea), Sang Won Bae (Suwon-si, South Korea) and Kyungmo Sung (Suwon-si, South Korea).

According to the abstract* released by the U.S. Patent & Trademark Office: "The present disclosure relate...