ALEXANDRIA, Va., Aug. 25 -- United States Patent no. 12,716,962, issued on Aug. 25, was assigned to SAMSUNG ELECTRO-MECHANICS Co. LTD. (Suwon-si, South Korea).
"Method for measuring DC bias aging characteristics of multilayer capacitor" was invented by Dong Seuk Kim (Suwon-si, South Korea), Geon Yong Lee (Suwon-si, South Korea), Myung Duk Seo (Suwon-si, South Korea) and Dong Hwi Shin (Suwon-si, South Korea).
According to the abstract* released by the U.S. Patent & Trademark Office: "A method for measuring DC bias aging characteristics of a multilayer capacitor includes applying a first poling voltage to a multilayer capacitor including a body having a dielectric layer including a plurality of dielectric grains and an internal electrode di...