ALEXANDRIA, Va., May 19 -- United States Patent no. 12,635,309, issued on May 19, was assigned to Samsung Display Co. Ltd. (Yongin-si, South Korea).
"Semiconductor light emitting diode including passivation layer having different thicknesses" was invented by Tae Hun Kim (Suwon-si, South Korea), Geun Woo Ko (Suwon-si, South Korea), Ha Nul Yoo (Suwon-si, South Korea), Gyeong Seon Park (Suwon-si, South Korea) and Tae Sung Jang (Suwon-si, South Korea).
According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor light emitting device includes a first conductivity type semiconductor, an active layer on the first conductivity type semiconductor, a second conductivity type semiconductor on the active layer, an elec...