ALEXANDRIA, Va., Feb. 24 -- United States Patent no. 12,563,789, issued on Feb. 24, was assigned to SAMSUNG DISPLAY Co. LTD. (Gyeonggi-Do, South Korea).
"Thin film transistor and method for manufacturing the same" was invented by Hyun-Jung Lee (Dongducheon-si, South Korea).
According to the abstract* released by the U.S. Patent & Trademark Office: "The present disclosure relates to a thin film transistor and a manufacturing method thereof, and the thin film transistor according to an embodiment includes: a substrate; a buffer layer positioned on the substrate and defining a trench on an upper surface thereof; a semiconductor positioned in the trench of the buffer layer; a gate electrode overlapping the semiconductor in a plan view; and a ...