ALEXANDRIA, Va., Sept. 1 -- United States Patent no. 12,727,361, issued on Sept. 1, was assigned to SAMSUNG DISPLAY Co. LTD. (Gyeonggi-Do, South Korea) and INDUSTRY-ACADEMIC COOPERATION FOUNDATION, YONSEI UNIVERSITY (Seoul, South Korea).

"Phototransistor, electronic device having the same, and method of manufacturing the phototransistor" was invented by Taesang Kim (Yongin-si, South Korea), Hyun Jae Kim (Yongin-si, South Korea), Hyukjoon Yoo (Yongin-si, South Korea) and Jun Hyung Lim (Yongin-si, South Korea).

According to the abstract* released by the U.S. Patent & Trademark Office: "A phototransistor includes a gate electrode, a semiconductor layer disposed on the gate electrode, a gate insulating layer disposed between the gate electrod...