US Patent Issued to ROHM on Sept. 1 for "Semiconductor device with groove structure" (Japanese Inventor)

ALEXANDRIA, Va., Sept. 1 -- United States Patent no. 12,727,195, issued on Sept. 1, was assigned to ROHM Co. LTD. (Kyoto, Japan).

"Semiconductor device with groove structure" was invented by Kentaro Nasu (Kyoto, Japan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device includes a first conductivity type first semiconductor region formed in a region on the first main surface side in a chip, a second conductivity type second semiconductor region formed in a region on the second main surface side in the chip, a first groove structure including a first groove formed in the first main surface while passing through the first semiconductor region so as to partition the first semiconductor region i...