ALEXANDRIA, Va., Oct. 27 -- United States Patent no. 12,777,699, issued on Oct. 27, was assigned to ROHM Co. LTD. (Kyoto, Japan).

"Semiconductor device and method of manufacturing same" was invented by Kunihiko Iwamoto (Kyoto, Japan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device includes: a semiconductor substrate; a semiconductor layer that is located over the semiconductor substrate and includes a drain region, a source region, a drift region, and a channel region; an insulating film that is in contact with the semiconductor layer and is located over the channel region; a first interlayer insulating film that covers the insulating film; and a field plate that is located over the firs...