US Patent Issued to ROHM on Nov. 3 for "Semiconductor device having dual trench structures and an impurity region" (Japanese Inventors)

ALEXANDRIA, Va., Nov. 3 -- United States Patent no. 12,787,407, issued on Nov. 3, was assigned to ROHM Co. LTD. (Kyoto, Japan).

"Semiconductor device having dual trench structures and an impurity region" was invented by Keiji Wada (Kyoto, Japan), Daisuke Ichikawa (Kyoto, Japan), Mitsuhide Kori (Kyoto, Japan), Naoki Izumi (Kyoto, Japan) and Bungo Tanaka (Kyoto, Japan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device includes a chip that has a first main surface on one side and a second main surface on another side, a pn-junction portion that is formed in an interior of the chip such as to extend along the first main surface, a device region that is provided in the first main surface, a fir...