ALEXANDRIA, Va., Nov. 25 -- United States Patent no. 12,484,285, issued on Nov. 25, was assigned to ROHM Co. LTD. (Kyoto, Japan).
"Semiconductor device and method for manufacturing the same" was invented by Yuki Nakano (Kyoto, Japan).
According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device of the present invention includes a gate electrode buried in a gate trench of a first conductivity-type semiconductor layer, a first conductivity-type source region, a second conductivity-type channel region, and a first conductivity-type drain region formed in the semiconductor layer, a second trench selectively formed in a source portion defined in a manner containing the source region in the surface of the s...