ALEXANDRIA, Va., May 5 -- United States Patent no. 12,620,439, issued on May 5, was assigned to Rohm Co. Ltd. (Kyoto, Japan).
"Non-volatile memory device" was invented by Seiji Takenaka (Kyoto, Japan).
According to the abstract* released by the U.S. Patent & Trademark Office: "A non-volatile memory device (1) includes a memory element (4) that can perform a program operation, a switch (9) having its first terminal connected to an application terminal for a first supply voltage (VDD), an even number of inverters (5, 6) of which input side is connected to a first node (N1) to which the second terminal of the switch and the memory element are connected, and a current limiter (8) that limits the current flowing through the path via the applic...