US Patent Issued to ROHM on March 3 for "Semiconductor device with x-shaped die pad to reduce thermal stress and ion migration from bonding layer" (Japanese Inventor)

ALEXANDRIA, Va., March 3 -- United States Patent no. 12,568,830, issued on March 3, was assigned to ROHM Co. LTD. (Kyoyo, Japan).

"Semiconductor device with x-shaped die pad to reduce thermal stress and ion migration from bonding layer" was invented by Tomoichiro Toyama (Kyoto, Japan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device includes: a supporting member having a wiring including a die-pad; a semiconductor element bonded to the die-pad; a wire bonded to the wiring and the semiconductor element; and a bonding layer that has a conductivity and bonds the die-pad and the semiconductor element. When viewed in a thickness direction of the semiconductor element, the die-pad includes a fi...