ALEXANDRIA, Va., March 17 -- United States Patent no. 12,581,672, issued on March 17, was assigned to ROHM Co. LTD. (Kyoto, Japan).
"Semiconductor device" was invented by Kenichi Yoshimura (Kyoto, Japan).
According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device includes a semiconductor layer having a principal surface, a first-conductivity-type well region formed at a surface layer portion of the principal surface of the semiconductor layer, a first-conductivity-type first impurity region that is formed at a surface layer portion of the well region and that has an inner wall portion, and a second-conductivity-type annular second impurity region formed at the surface layer portion of the well regio...