ALEXANDRIA, Va., July 16 -- United States Patent no. 12,672,544, issued on June 30, was assigned to ROHM Co. LTD. (Kyoto, Japan).

"Semiconductor device" was invented by Daichi Niwa (Kyoto, Japan) and Koshun Saito (Kyoto, Japan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device includes a substrate, a semiconductor element, a connection pad, a plated layer, a wire, and an encapsulation resin. The substrate includes a main surface. The semiconductor element is mounted on the main surface and includes a main surface electrode. The connection pad is formed of Cu, arranged with respect to the substrate, separated from the substrate, and includes a connection surface. The plated layer is formed ...