US Patent Issued to Rohm on June 16 for "Stabilized voltage generation circuit and semiconductor device" (Japanese Inventor)

ALEXANDRIA, Va., June 16 -- United States Patent no. 12,656,804, issued on June 16, was assigned to Rohm Co. Ltd. (Kyoto, Japan).

"Stabilized voltage generation circuit and semiconductor device" was invented by Hiroshi Yoshikawa (Kyoto, Japan).

According to the abstract* released by the U.S. Patent & Trademark Office: "The stabilized voltage generation circuit includes: a first voltage generation circuit configured to generate a first voltage with positive temperature characteristics; and a second voltage generation circuit including a first MOSFET having a gate of a first conductivity type and a second MOSFET having a gate of a second conductivity type different from the first conductivity type and configured to generate a second voltage...