ALEXANDRIA, Va., Dec. 2 -- United States Patent no. 12,490,457, issued on Dec. 2, was assigned to ROHM Co. LTD. (Kyoto, Japan).
"Semiconductor device including end insulating layer" was invented by Akihiro Hikasa (Kyoto, Japan).
According to the abstract* released by the U.S. Patent & Trademark Office: "The semiconductor device includes a semiconductor layer which has a main surface, a switching device which is formed in the semiconductor layer, a first electrode which is arranged on the main surface and electrically connected to the switching device, a second electrode which is arranged on the main surface at an interval from the first electrode and electrically connected to the switching device, a first terminal electrode which has a po...