ALEXANDRIA, Va., Aug. 25 -- United States Patent no. 12,720,817, issued on Aug. 25, was assigned to ROHM Co. LTD. (Kyoto, Japan).

"Semiconductor device" was invented by Shusaku Fujie (Kyoto, Japan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device includes a chip having a main surface, first potential regions formed in a surface layer portion of the main surface, the second at a distance from the first potential region; a first conductivity type drift region between the first and second potential regions in the surface layer portion; RESURF arrays each including first conductivity type RESURF regions in a surface layer portion of the drift region at a distance from each other in a first di...