US Patent Issued to Rohm on Aug. 25 for "Memory device with sub-arrays and selection switches for reducing bit line interference" (Japanese Inventors)

ALEXANDRIA, Va., Aug. 25 -- United States Patent no. 12,718,852, issued on Aug. 25, was assigned to Rohm Co. Ltd. (Kyoto, Japan).

"Memory device with sub-arrays and selection switches for reducing bit line interference" was invented by Takeharu Imai (Kyoto, Japan) and Tengai Kubo (Kyoto, Japan).

According to the abstract* released by the U.S. Patent & Trademark Office: "Upper bit lines extend along Y direction in an upper memory array and a Y decoder. Lower bit lines extend along Y direction in a lower memory array and the Y decoder. The Y decoder includes an upper Y line selection switch connected to the upper bit lines and a lower Y line selection switch connected to the lower bit lines and disposed at the other side of the upper Y line...