US Patent Issued to ROHM Co. on Nov. 3 for "Silicon carbide semiconductor substrate and semiconductor device" (Japanese Inventors)

ALEXANDRIA, Va., Nov. 3 -- United States Patent no. 12,787,385, issued on Nov. 3, was assigned to ROHM Co. LTD. (Kyoto, Japan).

"Silicon carbide semiconductor substrate and semiconductor device" was invented by Makoto Takamura (Kyoto, Japan), Takuji Maekawa (Kyoto, Japan), Mitsuru Morimoto (Kyoto, Japan), Noriyuki Masago (Kyoto, Japan) and Takayasu Oka (Kyoto, Japan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor substrate (1) according to an embodiment includes: a hexagonal SiC single crystal layer (13I); an SiC epitaxial growth layer (12E) disposed on an Si plane of an SiC single crystal layer (13I); and an SiC polycrystalline growth layer (18PC) disposed on a C plane opposite to the Si plan...